Jun.2022 18
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Semiconductor high voltage diode parameter symbols and their meanings

Introduction
Semiconductor high voltage diode parameter symbols and their meanings
Details
Semiconductor high voltage diode parameter symbols and their meanings
IF---Forward DC current (forward test current). The current passing through the inter-electrode of the germanium detection diode under the specified forward voltage VF; the maximum operating current (average value) allowed to pass continuously in the sinusoidal half-wave of the silicon rectifier and silicon stack under the specified conditions of use, and the silicon switch The maximum forward DC current allowed to pass through the diode under rated power; the current given when measuring the forward electrical parameters of the Zener diode
IF(AV)---forward average current
IFM (IM)---Forward peak current (forward maximum current). The maximum forward pulse current allowed through the diode at rated power. LED limiting current.
IH---Constant current, holding current.
Ii---light-emitting diode ignition current
IFRM---forward repetitive peak current
IFSM---forward non-repetitive peak current (surge current)
Io---rectified current. The operating current that passes under specified frequency and specified voltage conditions in a specific line
IF(ov)---Forward overload current
IL---photocurrent or steady current diode limit current
ID---dark current
IB2---Base modulation current in unijunction transistor
IEM---emitter peak current
IEB10---Reverse current between the emitter and the first base in a double-base unijunction transistor
IEB20---emitter current in double base unijunction transistor
ICM---Maximum output average current

iF---forward total instantaneous current
iR---reverse total instantaneous current
ir---reverse recovery current
Iop---operating current
Is---Stabilizing diode current stabilization
f---frequency
n---capacitance change index; capacitance ratio
Q---Excellence value (quality factor)
δvz---voltage regulator tube voltage drift
di/dt---critical rise rate of on-state current
dv/dt---critical rise rate of on-state voltage

IFMP---forward pulse current
IP---peak current
IV---valley point current
IR(AV)---reverse average current
IR (In)---Reverse DC current (reverse leakage current). When measuring the reverse characteristics, a given reverse current; the current passing through when silicon is stacked in a sinusoidal half-wave resistive load circuit and a specified value of reverse voltage is applied; the reverse operating voltage VR is applied to both ends of the silicon switching diode The current passing through; the leakage current generated by the Zener diode under the reverse voltage; the leakage current of the rectifier under the highest reverse operating voltage of the sine half wave.
IRM---Inverse peak current
IRR---Thyristor reverse repetitive average current
IDR---Thyristor off-state average repetitive current
IRRM---inverse repetitive peak current
IRSM---reverse non-repetitive peak current (reverse surge current)
Irp---reverse recovery current
Iz --- Stable voltage and current (reverse test current). When testing reverse electrical parameters, the given reverse current
Izk---Knee point current of voltage regulator tube
IOM---maximum forward (rectified) current. Under specified conditions, the maximum forward instantaneous current that can be withstood; the maximum operating current allowed to continuously pass through the germanium detector diode in a sinusoidal half-wave rectifier circuit with resistive load
IZSM --- Zener diode surge current
IZM---Maximum regulated current. The current allowed to pass through the Zener diode at maximum power dissipation

CT---barrier capacitance
Cj---junction (interelectrode) capacitance, indicating the total capacitance of the germanium detection diode under the specified bias voltage applied to both ends of the diode.
Cjv---bias junction capacitance
Co---zero bias capacitor
Cjo---zero bias junction capacitance
Cjo/Cjn---junction capacitance change
Cs---case capacitor or package capacitor
Ct---total capacitance
CTV---voltage temperature coefficient. The ratio of the relative change of the stable voltage to the absolute change of the ambient temperature under the test current
CTC---capacitance temperature coefficient
Cvn---nominal capacitance

PB---withstand pulse burnout power
PFT (AV)---average power dissipated in forward conduction
PFTM---forward peak power dissipation
PFT---Forward conduction total instantaneous power dissipation
Pd---dissipated power
PG---gate average power
PGM---peak gate power
PC---Control pole average power or collector dissipated power
Pi---input power
PK---maximum switching power
PM---rated power. The maximum power that the silicon diode can withstand when its junction temperature is not higher than 150 degrees
PMP---maximum leaked pulse power
PMS---maximum withstand pulse power
Po---output power
PR---reverse surge power
Ptot---total power dissipated
Pomax---maximum output power
Psc---continuous output power
PSM---non-repetitive surge power
PZM---maximum power dissipation. The maximum power a Zener diode is allowed to withstand under given conditions of use
RF(r)---Forward differential resistance. During forward conduction, the current shows obvious nonlinear characteristics as the voltage index increases. Under a certain forward voltage, if the voltage increases by a small amount △V, the forward current increases correspondingly by △I, then △V/△I is called differential resistance.
RBB---Resistance between bases of double-base transistor
RE---radio frequency resistor
RL---load resistance
Rs(rs)----series resistance
Rth----Thermal resistance
R(th)ja----Thermal resistance from junction to environment
Rz(ru)---Dynamic resistance
R(th)jc---Thermal resistance from junction to case
r δ---attenuation resistance
r(th)---Transient resistance
Ta---ambient temperature
Tc---case temperature
td---delay time
tf---fall time
tfr---forward recovery time
tg---circuit commutation off time
tgt---gate control pole turn-on time
Tj---junction temperature
Tjm---maximum junction temperature
ton---opening time
toff---off time
tr---rise time
trr---reverse recovery time
ts---storage time
tstg---storage temperature of temperature compensation diode
a---temperature coefficient
λp---luminescence peak wavelength
△ λ---Spectral half-width
eta---single-junction transistor partial pressure ratio or efficiency
VB---reverse peak breakdown voltage
Vc---rectified input voltage
VB2B1---voltage between bases
VBE10---reverse voltage between emitter and first base
VEB---saturation voltage drop
VFM---maximum forward voltage drop (forward peak voltage)
VF---Forward voltage drop (forward DC voltage)
△VF---Forward voltage drop difference
VDRM---off-state repetitive peak voltage
VF(AV)---forward average voltage
Vo---AC input voltage
VOM---maximum output average voltage
Vop---working voltage
Vn---center voltage
Vp---peak voltage
VR---reverse operating voltage (reverse DC voltage)
VRM---reverse peak voltage (highest test voltage)
V(BR)---breakdown voltage
VRRM---reverse repetitive peak voltage (reverse surge voltage)
VRWM---reverse working peak voltage
V v---Valley point voltage
Vz---stable voltage
△Vz---voltage increment of voltage regulation range
Vs---lead voltage (signal voltage) or stable current voltage of the current regulator
av---voltage temperature coefficient
Vk---Knee point voltage (stabilizing diode)
VL ---limit voltage

 
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